high-voltage high power transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ? high collectoremitter sustaining voltage e npn pnp v ceo(sus) = 160 vdc e mje4343 mje4353 ? high dc current gain e @ i c = 8.0 adc h fe = 35 (typ) ? low collectoremitter saturation voltage e v ce(sat) = 2.0 vdc (max) @ i c = 8.0 adc ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 160 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 160 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 7.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous peak (1) ????? ? ??? ? ????? i c ?????? ? ???? ? ?????? 16 20 ??? ? ? ? ??? adc ???????????? ???????????? base current e continuous ????? ????? i b ?????? ?????? 5.0 ??? ??? adc ???????????? ???????????? total power dissipation @ t c = 25 c ????? ????? p d ?????? ?????? 125 ??? ??? watts ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.0 ??? ??? c/w (1) pulse test: pulse width 5.0 m s, duty cycle 10%. 3.5 0 figure 1. power derating reference: ambient temperature t a , ambient temperature ( c) 25 50 100 125 3.0 2.5 0.5 75 150 1.0 1.5 2.0 p d , power dissipation (watts) on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 3 1 publication order number: mje4343/d mje4343 mje4353 16 ampere power transistors complementary silicon 160 volts npn pnp case 340d02 to218 type
mje4343 mje4353 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 200 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 160 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collectoremitter cutoff current (v ce = 80 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 750 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter cutoff current (v ce = rated v cb , v eb(off) = 1.5 vdc) (v ce = rated v cb , v eb(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.0 5.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ?????????????????????? collectorbase cutoff current (v cb = rated v cb , i e = 0) ????? ????? i cbo ??? ??? e ???? ???? 750 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitterbase cutoff current (v be = 7.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 8.0 adc, v ce = 2.0 vdc) (i c = 16 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 15 8.0 ???? ? ?? ? ???? 35 (typ) 15 (typ) ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 8.0 adc, i b = 800 ma) (i c = 16 adc, i b = 2.0 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.0 3.5 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 16 adc, i b = 2.0 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 3.9 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 16 adc, v ce = 4.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 3.9 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (2) (i c = 1.0 adc, v ce = 20 vdc, f test = 0.5 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 1.0 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? e ???? ? ?? ? ???? 800 ??? ? ? ? ??? pf (1) pulse test: pulse width 300 m s, duty cycle 2.0%. (2) f t = ? h fe ?? f test .
mje4343 mje4353 http://onsemi.com 3 t, time (s) m figure 2. switching times test circuit +11 v 25 m s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 3.0 i c , collector current (amp) t j = 25 c i c /i b = 10 v ce = 30 v 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.2 0.5 0.7 5.0 2.0 1.0 3.0 20 figure 3. typical turnon time 10 7.0 t r 0.3 note: reverse polarities to test pnp devices. t d @ v be(off) = 5.0 v 5.0 i c , collector current (amp) 0.5 3.0 2.0 1.0 figure 4. turnoff time 0.7 0.2 0.5 0.7 5.0 2.0 0.3 1.0 3.0 20 10 7.0 t j = 25 c i c /i b = 10 i b1 = i b2 v ce = 30 v t s t f t, time (s) m 2.0 0.2 i c , collector current (amp) 20 1.6 1.2 0.8 0.4 0 10 7.0 0.3 0.7 0.5 2.0 1.0 5.0 3.0 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 2.0 v figure 5. on voltages typical characteristics
mje4343 mje4353 http://onsemi.com 4 v ce , collector-emitter voltage (volts) 1000 0.2 i c , collector current (amps) 20 100 50 20 10 10 0.5 2.0 1.0 5.0 v ce = 2 v figure 6. mje4340 series (npn) h fe , dc current gain t j = 150 c 25 c -55 c 1000 0.2 i c , collector current (amps) 20 100 10 10 0.5 2.0 1.0 5.0 figure 7. mje4350 series (pnp) h fe , dc current gain 2.0 0.05 i b , base current (amp) 5.0 1.2 0 3.0 0.1 0.3 0.2 0.5 figure 8. collector saturation region 1.6 0.8 0.4 0.07 0.7 1.0 2.0 t j = 25 c i c = 4.0 a 8.0 a 16 a v ce = 2 v t j = 150 c 25 c -55 c v ce = 2 v t j = 150 c 25 c -55 c dc current gain t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), effective transient thermal q jc (t) = r(t) q jc q jc = 1.0 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 resistance (normalized) figure 9. thermal response 0.5 d = 0.5 0.05 0.02 200 500 1000 0.1 0.02 0.01 single pulse
mje4343 mje4353 http://onsemi.com 5 100 v ce , collector-emitter voltage (volts) 0.1 200 50 1.0 figure 10. maximum forward bias safe operating area 5.0ms dc 20 150 30 20 10 7.0 5.0 3.0 i c , collector current (amp) 0.2 0.5 2.0 5.0 10 50 70 100 secondary breakdown limited thermal limit t c = 25 c bonding wire limited reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent conditions during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 11 gives rbsoa characteristics. there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 10 may be found at any case temperature by using the appropriate curve on figure 9. 20 v ce , collector-emitter voltage (volts) 8.0 figure 11. maximum reverse bias safe operating area 16 120 100 80 60 40 20 i c , collector current (amps) 4.0 12 140 160 180 t j = 100 c v be(off) 5 v
mje4343 mje4353 http://onsemi.com 6 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
mje4343 mje4353 http://onsemi.com 7 notes
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